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Tin(IV) tert-butoxide

ALDRICH/494135 - ≥99.99% trace metals basis

Synonym: Tin tetra(tert -butoxide); Tin(IV) tert -butoxide; Tin(IV) tetra-tert -butoxide

CAS Number: 36809-75-3
Empirical Formula (Hill Notation): C16H36O4Sn
Molecular Weight: 411.16
MDL Number: MFCD00156551
Linear Formula: Sn(OC(CH3)3)4
Product Type: Chemical
Catalog Number PKG Qty. Price Quantity
45-494135-5G 5 g
 $175.00
1/EA		 Add To Favorites
45-494135-25G 25 g
 $643.00
1/EA		 Add To Favorites

 

assay ≥99.99% trace metals basis
form low-melting solid
InChI 1S/4C4H9O.Sn/c4*1-4(2,3)5;/h4*1-3H3;/q4*-1;+4
InChI key OSXGKVOYAKRLCS-UHFFFAOYSA-N
mp 40-44 °C (lit.)
Quality Level 100 
reaction suitability core: tin
SMILES string CC(C)(C)O[Sn](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C
Application:
  • Metal Oxide Electrospun Nanofibrous Membranes for Effective Dye Degradation and Sustainable Photocatalysis: This study involves the use of Tin(IV) tert-butoxide in the preparation of metal oxide nanofibrous membranes for photocatalytic applications, highlighting its relevance in material science and sustainable technology (V Jagadeesh Babu et al., 2023 ).
  • Atmospheric atomic layer deposition of SnO2 thin films with tin (II) acetylacetonate and water: The research uses Tin(IV) tert-butoxide in a process to develop SnO2 thin films, critical for electronics and optoelectronics, showcasing its utility in advanced material synthesis (VH Nguyen et al., 2022 ).
Features and Benefits: Precursor for OMCVD. Precursor for Sn-Al oxy alkoxide which may be heat-treated resulting in a zerovalent metal film. Ester elimination reactions lead to the rational synthesis of metal oxide materials.
General description: Tin(IV) tert-butoxide (Sn(OtBu)₄) is an organotin compound available with a high purity of ≥99.99% trace metals basis. It serves as a precursor for the synthesis of tin oxide (SnO₂) thin films and nanostructures. Its volatility and thermal decomposition make it ideal for chemical vapor deposition (CVD) and atomic layer deposition (ALD), enabling the production of SnO₂ coatings used in gas sensors and optoelectronic devices. Additionally, it is employed in the synthesis of tin oxide nanoparticles and nanowires, which are utilized in catalysis, energy storage, electronics, and sensor technologies.
Packaging: 5, 25 g in poly bottle
Purity ≥99.99% trace metals basis
mp 40-44 °C (lit.)
UNSPSC 12352103

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